h11d1/ h11d2/ h11d3/ h11d4 document number 83611 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179004 i179004 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, phototransistor output, with base connection, high bv cer voltage features ?ctr at i f = 10 ma, bv cer = 10 v: 20 % good ctr linearly with forward current low ctr degradation very high collector-emitter breakdown voltage - h11d1/h11d2, bv cer = 300 v - h11d3/h11d4, bv cer = 200 v isolation test voltage: 5300 v rms low coupling capacitance high common mode transient immunity package with base connection lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 bsi iec60950 iec60065 fimko applications telecommunications replace relays description the h11d1/ h11d2/ h11d3/ h11d4 are optocou- plers with very high bv cer . they are intended for telecommunications applicat ions or any dc applica- tion requiring a high blocking voltage. the h11d1/ h11d2 are identical and the h11d3/ h11d4 are identical. order information for additional information on t he available options refer to option information. part remarks h11d1 ctr > 20 %, dip-6 h11d2 ctr > 20 %, dip-6 h11d3 ctr > 20 %, dip-6 h11d4 ctr > 20 %, dip-6 h11d1-x007 ctr > 20 %, smd-6 (option 7) h11d1-x009 ctr > 20 %, smd-6 (option 9) h11d2-x007 ctr > 20 %, smd-6 (option 7) H11D3-X007 ctr > 20 %, smd-6 (option 7)
www.vishay.com 2 document number 83611 rev. 1.4, 26-oct-04 h11d1/ h11d2/ h11d3/ h11d4 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 si fsm 2.5 a power dissipation p diss 100 mw parameter test condition part symbol value unit collector-emitter voltage h11d1 v ce 300 v h11d2 v ce 300 v h11d3 v ce 200 v h11d4 v ce 200 v collector-base voltage h11d1 v cbo 300 v h11d2 v cbo 300 v h11d3 v cbo 200 v h11d4 v cbo 200 v emitter-base voltage v beo 7.0 v collector current i c 100 ma power dissipation p diss 300 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector, refer to climate din 50014, part 2, nov. 74) v iso 5300 v rms insulation thickness between emitter and detector 0.4 mm creepage distance 7.0 mm clearance distance 7.0 mm comparative tracking index (per din iec 112/vde 0303, part 1) 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 sec., dip soldering: distance to seating plane 1.5 mm t sld 260 c
h11d1/ h11d2/ h11d3/ h11d4 document number 83611 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.1 1.5 v reverse voltage i r = 10 av r 6.0 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance r thja 750 k/w parameter test condition part symbol min ty p. max unit collector-emitter breakdown voltage i ce = 1.0 ma, r be = 1.0 m ? h11d1 bv cer 300 v h11d2 bv cer 300 v h11d3 bv cer 200 v h11d4 bv cer 200 v emitter-base breakdown voltage i eb = 100 abv ebo 7.0 v collector-emitter capacitance v ce = 10 v, f = 1.0 mhz c ce 7.0 pf collector - base capacitance v cb = 10 v, f = 1.0 mhz c cb 8.0 pf emitter - base capacitance v eb = 5.0 v, f = 1.0 mhz c eb 38 pf thermal resistance r th 250 k/w parameter test condition part symbol min ty p. max unit coupling capacitance c c 0.6 pf current transfer ratio i f = 10 ma, v ce = 10 v, r be = 1.0 m ? i c /i f 20 % collector-emitter, saturation voltage i f = 10 ma, i c = 0.5 ma, r be = 1.0 m ? v cesat 0.25 0.4 v collector-emitter leakage current v ce = 200 v, r be = 1.0 m ? h11d1 i cer 100 na h11d2 i cer 100 na v ce = 300 v, r be = 1.0 m ? , t a = 100 c h11d1 i cer 250 a h11d2 i cer 250 a parameter test condition symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 10 v, r be = 1.0 m ? ctr 20 %
www.vishay.com 4 document number 83611 rev. 1.4, 26-oct-04 h11d1/ h11d2/ h11d3/ h11d4 vishay semiconductors switching characteristics switching times measurement-test circuit and waveforms typical characteri stics (tamb = 25 c unless otherwise specified) parameter te s t c o n d i t i o n symbol min ty p. max unit turn-on time i c = 2.0 ma (to be adjusted by varying i f ), r l = 100 ? , v cc = 10 v t on 5.0 s rise time i c = 2.0 ma (to be adjusted by varying i f ), r l = 100 ? , v cc = 10 v t r 2.5 s turn-off time i c = 2.0 ma (to be adjusted by varying i f ), r l = 100 ? , v cc = 10 v t off 6.0 s fall time i c = 2.0 ma (to be adjusted by varying i f ), r l = 100 ? , v cc = 10 v t f 5.5 s figure 1. current transfer ratio (typ.) figure 2. diode forward voltage (typ.) v ce =10 v, normalized to if = 10 ma, nctr=f(i f ) ih11d1_02 ntcr 1.2 1 0.8 0.6 0.4 0.2 0 10 -4 10 -3 10 -2 10 -1 i f /a ih11d1_03 v f =f(i f ,t a ) v f /v 0.9 1.2 v 1.1 1.0 10 -1 510 0 5 10 1 5 ma 10 2 i f /ma fiure 3.outputcharateristis fiure 4.outputcharateristis ih11d1_04 i ce =f(v ce ,i b ) i ce /ma 10 0 10 1 10 2 10 -2 10 -1 v ce /v 20 17.5 15 12.5 10 7.5 5 2.5 0 ih11d1_05 i ce =f(v ce ,i f ) i ce /ma 10 0 10 1 10 2 10 -2 10 -1 v ce /v 20 15 10 5 0 25 30
h11d1/ h11d2/ h11d3/ h11d4 document number 83611 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 5. transistor capacitances (typ.) figure 6. collector-emitter leakage current (typ.) ih11d1_06 f=1.0 mhz, c ce =f (v ce ) c cb =f (v cb ), c eb =f (v eb ) c xx /pf 10 0 10 1 10 2 10 -2 10 -1 v xx /v 20 10 0 30 40 50 60 70 80 90 100 ih11d1_07 i f =0, rbe=1.0 m ? , i cer =f(v ce ) c cer /a v ce /v 0 25 50 75 100 125 150 175 200 10 10 10 10 10 10 10 -6 -7 -8 -9 -10 -11 -12 fiure 7.permissilelossdiode fiure 8.permissilepoerdissipation ih11d1_08 i f =f(t a ) i f /ma t a /c 0 10 203040 506070 8090100 100 90 80 70 60 50 40 30 20 10 0 ih11d1_09 p tot =f(t a ) p tot /mw t a /c 0 10 203040 506070 8090100 400 350 300 250 200 150 100 50 0 fiure 9.sithintimesmeasur ement-testciruitandwaeform ih11d1 _01 t off t r 10% 50% 90% t s t pdoff t pdon t on t r t d output input 10% 50% 90% 0 0 i f r l i c v o v cc gnd 47 ?
www.vishay.com 6 document number 83611 rev. 1.4, 26-oct-04 h11d1/ h11d2/ h11d3/ h11d4 vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
h11d1/ h11d2/ h11d3/ h11d4 document number 83611 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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